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TTINY26 0LVEL M29LV0 SCXX3 TECC1880 X2512 4051B 06R3CBP
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  inchange semiconductor isc product specification isc silicon npn power transistor 2SC3743 description collector-emiiter breakdown voltage- : v (br)ceo = 800v(min.) wide area of safe operation high speed switching applications designed for high speed sw itching applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 2 a i cm collector current-peak 4 a i b b base current-continuous 1 a collector power dissipation @t a =25 2 p c collector power dissipation @t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3743 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 800 v v ce( sat ) collector-emitter saturation voltage i c = 0.8a; i b = 0.16a 0.6 v v be( sat ) base-emitter saturation voltage i c = 0.8a; i b = 0.16a 1.2 v i cbo collector cutoff current v cb = 900v; i e = 0 50 a i ebo emitter cutoff current v eb = 7v; i c = 0 50 a h fe-1 dc current gain i c = 0.1a; v ce = 5v 6 h fe-2 dc current gain i c = 0.8a; v ce = 5v 6 switching times t on turn-on time 1.0 s t s storage time 4.0 s t f fall time i c = 0.8a; i b1 = 0.16a;i b2 = -0.32a; v cc = 250v 1.0 s isc website www.iscsemi.cn


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